发明名称 Beam homogenizer, laser irradiation apparatus, and method for manufacturing semiconductor device
摘要 The present invention is to provide a beam homogenizer, a laser irradiation apparatus, and a method for manufacturing a semiconductor device, which can suppress the loss of a laser beam and form a beam spot having homogeneous energy distribution constantly on an irradiation surface without being affected by beam parameters of a laser beam. A deflector is provided at an entrance of an optical waveguide or a light pipe used for homogenizing a laser beam emitted from a laser oscillator. A pair of reflection planes of the deflector is provided so as to have a tilt angle to an optical axis of the laser beam, whereby the entrance of the optical waveguide or the light pipe is expanded. Accordingly, the loss of the laser beam can be suppressed. Moreover, by providing an angle adjusting mechanism to the deflector, a beam spot having homogeneous energy distribution can be formed at an exit of the optical waveguide.
申请公布号 US8326102(B2) 申请公布日期 2012.12.04
申请号 US201113069464 申请日期 2011.03.23
申请人 TANAKA KOICHIRO;OISHI HIROTADA;SEMICONDUCTOR ENERGY LABORATORY CO., LTD. 发明人 TANAKA KOICHIRO;OISHI HIROTADA
分类号 G02B6/12;G02B6/26 主分类号 G02B6/12
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