| 发明名称 |
Nanowire circuits in matched devices |
| 摘要 |
An inverter device includes a first nanowire connected to a voltage source node and a ground node, a first p-type field effect transistor (pFET) device having a gate disposed on the first nanowire, and a first n-type field effect transistor (nFET) device having a gate disposed on the first nanowire. |
| 申请公布号 |
US8324940(B2) |
申请公布日期 |
2012.12.04 |
| 申请号 |
US20100758939 |
申请日期 |
2010.04.13 |
| 申请人 |
BANGSARUNTIP SARUNYA;COHEN GUY;MAJUMDAR AMLAN;SLEIGHT JEFFREY W.;INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
BANGSARUNTIP SARUNYA;COHEN GUY;MAJUMDAR AMLAN;SLEIGHT JEFFREY W. |
| 分类号 |
H03K19/0948 |
主分类号 |
H03K19/0948 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
|
| 地址 |
|
