发明名称 |
Phase change memory device |
摘要 |
A phase change memory device includes a plurality of programming current driving blocks each of which is configured to provide a corresponding phase change memory cell with a programming current corresponding to input data and a programming current adjusting block commonly connected to the plurality of programming current driving blocks and configured to generate a control voltage to adjust the programming current. |
申请公布号 |
US8325514(B2) |
申请公布日期 |
2012.12.04 |
申请号 |
US20090432347 |
申请日期 |
2009.04.29 |
申请人 |
PARK KYOUNG-WOOK;HYNIX SEMICONDUCTOR, INC. |
发明人 |
PARK KYOUNG-WOOK |
分类号 |
G11C11/00 |
主分类号 |
G11C11/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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