Methods for fabricating a photolithographic mask and for fabricating a semiconductor integrated circuit using such a mask

摘要

Methods are provided for designing a photolithographic mask and for fabricating a semiconductor IC using such a mask. In accordance with one embodiment a method for fabricating a semiconductor IC includes determining a design target for a region within the IC. An initial mask geometry is determined for the region having a mask opening and a mask bias relative to the design target. A sub-resolution edge ring having a predetermined, fixed spacing to an edge of the mask opening is inserted into the mask geometry and a lithographic mask is generated. A material layer is applied overlying a semiconductor substrate upon which the IC is to be fabricated and a layer of photoresist is applied overlying the material layer. The layer of photoresist is exposed through the lithographic mask and is developed. A process step is then performed on the material layer using the layer of photoresist as a mask.