| 摘要 |
An integrated circuit includes a first PMOS transistor, where its drain is arranged to be coupled to a voltage output, and its source is coupled to the drain of a second PMOS transistor. The source of the second PMOS transistor is arranged to be coupled to a high power supply voltage. The source and drain of a MOS capacitor are coupled to the source of the first PMOS transistor. The drain of an NMOS transistor is coupled to the drain of the first PMOS transistor. The integrated circuit is configured to receive a voltage input to generate the voltage output having a maximum voltage higher than the voltage input. The gate oxide layer thickness of the MOS capacitor is less than that of the first PMOS transistor. |
