发明名称 |
Channel layer for a thin film transistor, thin film transistor including the same, and methods of manufacturing the same |
摘要 |
Provided is a channel layer for a thin film transistor, a thin film transistor and methods of forming the same. A channel layer for a thin film transistor may include IZO (indium zinc oxide) doped with a transition metal. A thin film transistor may include a gate electrode and the channel layer formed on a substrate, a gate insulating layer formed between the gate electrode and channel layer, and a source electrode and a drain electrode which contact ends of the channel layer. |
申请公布号 |
US8324628(B2) |
申请公布日期 |
2012.12.04 |
申请号 |
US20080073102 |
申请日期 |
2008.02.29 |
申请人 |
KIM SUN-IL;SONG I-HUN;PARK YOUNG-SOO;KANG DONG-HUN;KIM CHANG-JUNG;PARK JAE-CHUL;SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
KIM SUN-IL;SONG I-HUN;PARK YOUNG-SOO;KANG DONG-HUN;KIM CHANG-JUNG;PARK JAE-CHUL |
分类号 |
H01L29/04;H01L21/20 |
主分类号 |
H01L29/04 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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