发明名称 |
Galvanic isolation that incorporates a transformer with an optical link and that can be integrated onto a single semiconductor substrate |
摘要 |
Methods and structures provide galvanic isolation for electrical systems using a wide oxide filled trench, and that allows power across the system divide with a transformer, and that transmits data at a high baud rate using an optical link. The system solution allows the integration of all of these elements onto a single semiconductor substrate in contrast to currently available galvanic isolation systems that require multiple individual silicon die that are connected by wire bonds and are relatively slow. |
申请公布号 |
US8324603(B2) |
申请公布日期 |
2012.12.04 |
申请号 |
US20100862136 |
申请日期 |
2010.08.24 |
申请人 |
FRENCH WILLIAM;HOPPER PETER J.;VASHCHENKO VLADISLAV;LINDORFER PHILIPP;NATIONAL SEMICONDUCTOR CORPORATION |
发明人 |
FRENCH WILLIAM;HOPPER PETER J.;VASHCHENKO VLADISLAV;LINDORFER PHILIPP |
分类号 |
G02B27/00;H01L29/00 |
主分类号 |
G02B27/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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