发明名称 |
Group III nitride crystal and manufacturing method thereof |
摘要 |
A group III nitride crystal containing therein an alkali metal element comprises a base body, a first group III nitride crystal formed such that at least a part thereof makes a contact with the base body, the first group III nitride crystal deflecting threading dislocations in a direction different from a direction of crystal growth from the base body and a second nitride crystal formed adjacent to the first group III nitride crystal, the second nitride crystal having a crystal growth surface generally perpendicular to the direction of the crystal growth. |
申请公布号 |
US8323404(B2) |
申请公布日期 |
2012.12.04 |
申请号 |
US20060561662 |
申请日期 |
2006.11.20 |
申请人 |
IWATA HIROKAZU;SARAYAMA SEIJI;FUSE AKIHIRO;RICOH COMPANY, LTD. |
发明人 |
IWATA HIROKAZU;SARAYAMA SEIJI;FUSE AKIHIRO |
分类号 |
C30B7/14 |
主分类号 |
C30B7/14 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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