发明名称 |
Nonvolatile memory device and method of manufacturing the same |
摘要 |
A nonvolatile memory device includes gate electrodes three dimensionally arranged on a semiconductor substrate, a semiconductor pattern extending from the semiconductor substrate and crossing sidewalls of the gate electrodes, a metal liner pattern formed between the semiconductor pattern and formed on a top surface and a bottom surface of each of the gate electrodes, and a charge storage layer formed between the semiconductor pattern and the metal liner pattern. |
申请公布号 |
US8324677(B2) |
申请公布日期 |
2012.12.04 |
申请号 |
US20100704365 |
申请日期 |
2010.02.11 |
申请人 |
LEE SUNWOO;LEE SANGWOO;LEE CHANGWON;LEE JEONGGIL;SAMSUNG ELECTRONIC CO., LTD. |
发明人 |
LEE SUNWOO;LEE SANGWOO;LEE CHANGWON;LEE JEONGGIL |
分类号 |
H01L29/72 |
主分类号 |
H01L29/72 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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