发明名称 |
Diodes, and methods of forming diodes |
摘要 |
Some embodiments include methods of forming diodes. The methods may include oxidation of an upper surface of a conductive electrode to form an oxide layer over the conductive electrode. In some embodiments, the methods may include formation of an oxidizable material over a conductive electrode, and subsequent oxidation of the oxidizable material to form an oxide layer over the conductive electrode. In some embodiments, the methods may include formation of a metal halide layer over a conductive electrode. Some embodiments include diodes that contain a metal halide layer between a pair of diode electrodes.
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申请公布号 |
US8323995(B2) |
申请公布日期 |
2012.12.04 |
申请号 |
US201113094642 |
申请日期 |
2011.04.26 |
申请人 |
SANDHU GURTEJ S.;SRINIVASAN BHASKAR;MICRON TECHNOLOGY, INC. |
发明人 |
SANDHU GURTEJ S.;SRINIVASAN BHASKAR |
分类号 |
H01L21/00 |
主分类号 |
H01L21/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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