发明名称 |
Method for forming silicon film, method for forming pn junction and pn junction formed using the same |
摘要 |
A method for forming a silicon film may be performed using a microheater including a substrate and a metal pattern spaced apart from the substrate. The silicon film may be formed on the metal pattern by applying a voltage to the metal pattern of the microheater to heat the metal pattern and by exposing the microheater to a source gas containing silicon. The silicon film may be made of polycrystalline silicon. A method for forming a pn junction may be performed using a microheater including a substrate, a conductive layer on the substrate, and a metal pattern spaced apart from the substrate. The pn junction may be formed between the metal pattern and the conductive layer by applying a voltage to the metal pattern of the microheater to heat the metal pattern. The pn junction may be made of polycrystalline silicon. |
申请公布号 |
US8324071(B2) |
申请公布日期 |
2012.12.04 |
申请号 |
US20090458665 |
申请日期 |
2009.07.20 |
申请人 |
CHOI JUNHEE;ZOULKARNEEV ANDREI;SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
CHOI JUNHEE;ZOULKARNEEV ANDREI |
分类号 |
H01L21/76;H01L21/20;H01L21/36;H01L21/44 |
主分类号 |
H01L21/76 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|