发明名称 Seed layer and free magnetic layer for perpendicular anisotropy in a spin-torque magnetic random access memory
摘要 A magnetic layer that includes a seed layer comprising at least tantalum and a free magnetic layer comprising at least iron. The free magnetic layer is grown on top of the seed layer and the free magnetic layer is perpendicularly magnetized. The magnetic layer may be included in a magnetic tunnel junction (MTJ) stack.
申请公布号 US8324697(B2) 申请公布日期 2012.12.04
申请号 US20100815923 申请日期 2010.06.15
申请人 WORLEDGE DANIEL C.;INTERNATIONAL BUSINESS MACHINES CORPORATION 发明人 WORLEDGE DANIEL C.
分类号 H01L29/82 主分类号 H01L29/82
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