发明名称 |
Semiconductor device having oxide semiconductor layer |
摘要 |
Disclosed is a highly reliable semiconductor device and a manufacturing method thereof, which is achieved by using a transistor with favorable electrical characteristics and high reliability as a switching element. The semiconductor device includes a driver circuit portion and a pixel portion over one substrate, and the pixel portion comprises a light-transmitting bottom-gate transistor. The light-transmitting bottom-gate transistor comprises: a transparent gate electrode layer; an oxide semiconductor layer over the gate electrode layer, a superficial layer of the oxide semiconductor layer including comprising a microcrystal group of nanocrystals; and source and drain electrode layers formed over the oxide semiconductor layer, the source and drain electrode layers comprising a light-transmitting oxide conductive layer. |
申请公布号 |
US8324621(B2) |
申请公布日期 |
2012.12.04 |
申请号 |
US20100899962 |
申请日期 |
2010.10.07 |
申请人 |
YAMAZAKI SHUNPEI;SAKATA JUNICHIRO;AKIMOTO KENGO;NODA KOSEI;SEMICONDUCTOR ENERGY LABORATORY CO., LTD. |
发明人 |
YAMAZAKI SHUNPEI;SAKATA JUNICHIRO;AKIMOTO KENGO;NODA KOSEI |
分类号 |
H01L29/12 |
主分类号 |
H01L29/12 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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