| 摘要 |
A method for removing silicon oxide based residue from a stack with a doped silicon oxide layer with features with diameters less than 100 nm is provided. A wet clean solution of between 25% to 60% by weight of NH4F, and between 0.05% and 5% by weight of phosphoric acid, and between 0.05% and 5% by weight citric acid, in a water solvent is provided to an area on a surface of the stack. The wet clean solution is removed from the area on the surface of the stack between 0.5 to 10 seconds after the area on the surface of the stack was exposed to the wet clean solution. |
