| 摘要 |
<p>PURPOSE: A three dimensional structured non-volatile memory device and a manufacturing method thereof are provided to increase the number of memory cells by connecting one string row with two or more bit lines. CONSTITUTION: A plurality of source side memory cells are serially connected between a drain selection transistor and a source selection transistor. The plurality of source side memory cells are laminated to along the source side channel and the drain side channel, respectively. A plurality of strings(S0-S3) comprises the plurality of source side memory cells and the plurality of drain side memory cells. A plurality of bit lines(BL0,BL1) are connected to the drain selection transistor. The plurality of source lines are commonly connected to the source selection transistor.</p> |
