| 摘要 |
<p>PURPOSE: A reflection type exposure apparatus is provided to improve a processing yield by measuring out-of-band optical components by including an optical sensor in an optical path of the out-of-band optical component. CONSTITUTION: An exposure mask(110) reflects EUV(extreme ultra violet) light(10) to a wafer(130). A circuit image pattern forms the EUV light on a surface. A mask blade is located between a light source and the exposure mask. The mask blade sets an irradiated area of the exposure mask. An inclined surface is formed on an adjacent predetermined portion of the irradiated area. [Reference numerals] (10) EUV light source; (140) Light sensor; (AA) Irradiation area; (BB,CC) X-axis blade</p> |
