| 摘要 |
<p>PURPOSE: A semiconductor device including a bonding pad and a manufacturing method thereof are provided to prevent a crack in the bonding pad by supporting the uppermost metal layer with a passivity layer. CONSTITUTION: A device substrate(210) has the front(212) and the rear(214). An interconnection structure(230) with n metal layers is formed on the front of the device substrate. An opening is formed on the device substrate to expose the n-th metal layer(248) via the interconnection structure from the rear of the device substrate. A bonding pad is directly contacted with the n-th metal layer and is formed on the rear of the device substrate.</p> |
