发明名称 Susceptor for chemical vapor deposition apparatus and chemical vapor deposition apparatus having the same
摘要 PURPOSE: A susceptor for a chemical vapor deposition apparatus and the chemical vapor depositing apparatus including the same are provided to prevent source gas from being inputted to the bottom of a wafer during an epitaxial growth process by moving a wafer guide to a contact position with the edge of a wafer. CONSTITUTION: A susceptor(200) includes a pocket(210) which receives a wafer(W). A movable wafer guide(230) is installed in the pocket. The water guide includes a body unit(231) and a moving pin(232). The moving pin moves a body unit between a contact position and a separation position. The body unit includes a wall part(231a) and a bottom part(231b) which is extended from the wall part to the bottom of the wafer.
申请公布号 KR101206924(B1) 申请公布日期 2012.11.30
申请号 KR20110011227 申请日期 2011.02.08
申请人 发明人
分类号 H01L21/683;H01L21/205 主分类号 H01L21/683
代理机构 代理人
主权项
地址