发明名称
摘要 Provided is a substrate for processing a wafer. The present invention can provide a substrate having excellent heat resistance and dimensional stability. The present invention can provide a substrate that has excellent stress relaxation properties, and therefore can prevent a wafer from being destroyed due to residual stress. Also, the present invention can provide a substrate that can prevent a wafer from being damaged or fried off due to a non-uniformly applied pressure during the wafer processing process, and that exhibits excellent cuttability. For these reasons, the substrate can be useful as a sheet for processing a wafer in various wafer preparation processes such as dicing, back-grinding, and picking-up.
申请公布号 JP2012530375(A) 申请公布日期 2012.11.29
申请号 JP20120515973 申请日期 2010.06.15
申请人 发明人
分类号 H01L21/304;C08F2/44;C08F265/00;C08F289/00;C09J7/02;H01L21/301;H01L21/683 主分类号 H01L21/304
代理机构 代理人
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