发明名称 SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE
摘要 A sinker layer is in contact with a first conductivity-type well, and is separated from a first conductivity-type collector layer and a second conductivity-type drift layer. A second conductivity-type diffusion layer (second second-conductivity-type high-concentration diffusion layer) is formed in the surface layer of the sinker layer. The second conductivity-type diffusion layer has a higher impurity concentration than that of the sinker layer. The second conductivity-type diffusion layer and the first conductivity-type collector layer are isolated from each other with an element isolation insulating film interposed therebetween.
申请公布号 US2012299055(A1) 申请公布日期 2012.11.29
申请号 US201213567718 申请日期 2012.08.06
申请人 FUJII HIROKI;RENESAS ELECTRONICS CORPORATION 发明人 FUJII HIROKI
分类号 H01L29/739 主分类号 H01L29/739
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