SEMICONDUCTOR DEVICE PRODUCTION METHOD AND SEMICONDUCTOR DEVICE

摘要

A semiconductor device production method including, in order: a first step in which a silicon semiconductor element having a pn junction protruding section from which a pn junction protrudes is prepared; a second step in which an insulation layer is formed such that the pn junction protruding section is covered; and a third step in which a layer comprising a glass composition that does not substantially contain a polyvalent element as a defoaming agent or Pb is formed upon the insulation layer, and then a glass layer is formed upon the insulation layer by sintering the layer comprising the glass composition. Provision of a semiconductor device using a glass material not containing lead and having a high pressure-resistance similar to when conventional "glass material having lead silicate as the main component thereof" is used is possible using this semiconductor device production method. Suppression of the generation of foam, which is sometimes generated from a boundary surface between a semiconductor substrate and the glass layer during the process of sintering the layer comprising the glass composition and forming the glass layer, is possible without adding, or adding in a small volume only, a nickel oxide or other component having a defoaming action.