| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor memory device capable of suppressing shape and size fluctuations of a magnetic tunnel junction (MTJ) element, and easily manufacturing the MTJ element. <P>SOLUTION: A semiconductor memory device comprises a semiconductor substrate. A plurality of magnetic tunnel junction elements are formed above the semiconductor substrate, and can store data by a variation in the resistance status and rewrite data by the current. A plurality of cell transistors are formed on the semiconductor substrate, are provided corresponding to magnetic tunnel junction elements, and turn into a conducted state when the current flows through the corresponding magnetic tunnel junction elements. A plurality of gate electrodes are in cell transistors, and control a conducted state of the cell transistors. The cell transistors are formed on a plurality of active areas, and the active areas extend in a direction crossing the gate electrode at an angle of (90-atan(1/3)). <P>COPYRIGHT: (C)2013,JPO&INPIT |
