发明名称 |
NEGATIVE ELECTRODE ACTIVE MATERIAL FOR ELECTRICAL DEVICES |
摘要 |
This negative electrode active material for electrical devices comprises an alloy containing at least 12 mass% but less than 100 mass% of Si, more than 0 mass% but not more than 45 mass% of Sn, and more than 0 mass% but not more than 43 mass% of Al, with the remainder consisting of unavoidable impurities. The negative electrode active material can be obtained by using a multidimensional DC magnetron sputtering apparatus with Si, Sn and Al as targets, for example. Electrical devices that use this negative electrode active material exhibit an improvement in cycle life, and outstanding capacity and cycle durability. |
申请公布号 |
WO2012160866(A1) |
申请公布日期 |
2012.11.29 |
申请号 |
WO2012JP56928 |
申请日期 |
2012.03.16 |
申请人 |
NISSAN MOTOR CO., LTD.;WATANABE, MANABU;YOSHIDA, MASAO;TANAKA, OSAMU |
发明人 |
WATANABE, MANABU;YOSHIDA, MASAO;TANAKA, OSAMU |
分类号 |
H01M4/38;C22C30/04 |
主分类号 |
H01M4/38 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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