发明名称 |
NONVOLATILE MEMORY DEVICE AND METHOD OF FORMING THE NONVOLATILE MEMORY DEVICE INCLUDING GIVING AN UPPER PORTION OF AN INSULATING LAYER AN ETCHING SELECTIVITY WITH RESPECT TO A LOWER PORTION |
摘要 |
A nonvolatile memory device and a method of forming a nonvolatile memory device are provided. The nonvolatile memory device includes an active region of a semiconductor substrate defined by a device isolation layer, a tunnel insulating structure disposed on the active region, and a charge storage structure disposed on the tunnel insulating structure. The nonvolatile memory device also includes a gate interlayer dielectric layer disposed on the charge storage structure, and a control gate electrode disposed on the gate interlayer dielectric layer. The charge storage structure includes an upper charge storage structure and a lower charge storage structure, and the upper charge storage structure has a higher impurity concentration than the lower charge storage structure. |
申请公布号 |
US2012302053(A1) |
申请公布日期 |
2012.11.29 |
申请号 |
US201213571502 |
申请日期 |
2012.08.10 |
申请人 |
LEE SEUNG-JUN;LEE WOON-KYUNG;SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
LEE SEUNG-JUN;LEE WOON-KYUNG |
分类号 |
H01L21/283 |
主分类号 |
H01L21/283 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|