| 发明名称 |
Methods for Forming Strained Channel Dynamic Random Access Memory Devices |
| 摘要 |
DRAM trench capacitors formed by, inter alia, deposition of conductive material into a trench or doping the semiconductor region in which the trench is defined.
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| 申请公布号 |
US2012302032(A1) |
申请公布日期 |
2012.11.29 |
| 申请号 |
US201213568894 |
申请日期 |
2012.08.07 |
| 申请人 |
BULSARA MAYANK;CURRIE MATTHEW T.;LOCHTEFELD ANTHONY J.;TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. |
发明人 |
BULSARA MAYANK;CURRIE MATTHEW T.;LOCHTEFELD ANTHONY J. |
| 分类号 |
H01L21/02;H01L21/8242;H01L29/94 |
主分类号 |
H01L21/02 |
| 代理机构 |
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