NEGATIVE ELECTRODE ACTIVE MATERIAL FOR ELECTRICAL DEVICES

摘要

This negative electrode active material for electrical devices comprises an alloy containing at least 27 mass% but less than 100 mass% of Si, more than 0 mass% but not more than 73 mass% of Sn, and more than 0 mass% but not more than 73 mass% of V, with the remainder consisting of unavoidable impurities. The negative electrode active material can be obtained by using a multidimensional DC magnetron sputtering apparatus with Si, Sn and V as targets, for example. Electrical devices that use this negative electrode active material exhibit an improvement in cycle life, and outstanding capacity and cycle durability.