MANUFACTURING METHOD FOR SEMICONDUCTOR DEVICE

摘要

PROBLEM TO BE SOLVED: To provide a semiconductor device having achieved microfabrication while suppressing a defect.

SOLUTION: By forming a convex part or a trench (groove) in an insulation layer and providing a channel formation region of a semiconductor layer in contact with the convex part or the trench, the channel formation region is extended in a substrate vertical direction. This can extend the effective channel length while achieving the microfabrication of the transistor. Moreover, by performing R-processing treatment on an upper end corner part of the convex part or the trench in contact with the semiconductor layer before the formation of the semiconductor layer, the thin semiconductor layer can be formed with excellent coverage.

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