发明名称 DIELECTRIC AND/OR CAPACITOR FORMATION
摘要 Technologies are generally described for a component, a method to form a component and/or a system configured to form a component. In an example, the method to form a component may include placing a first layer including a conductive material on a support. The method may include placing a second layer, including the conductive material and oxygen, on the first layer. The method may include placing a third layer, including tellurium and oxygen, on the second layer. The method may include placing a fourth layer, including tin and tellurium, on the third layer. In an example, placing of the fourth layer on the third layer may include placing a fifth layer including tellurium on the fourth layer, placing a sixth layer including tin on the fifth layer, placing an seventh layer including tellurium on the sixth layer and annealing the fifth, sixth, and seventh layers to form the fourth layer.
申请公布号 US2012301735(A1) 申请公布日期 2012.11.29
申请号 US201113391038 申请日期 2011.05.26
申请人 EMPIRE TECHNOLOGY DEVELOPMENT LLC 发明人 ROTHFUSS CHRIS;CHEN SUNG-WEI
分类号 H01G9/07;B32B9/04;B32B15/04;H01G13/00 主分类号 H01G9/07
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