发明名称 |
PIXEL SENSOR CELL WITH A DUAL WORK FUNCTION GATE ELECTODE |
摘要 |
Pixel sensor cells, methods of fabricating pixel sensor cells, and design structures for a pixel sensor cell. The pixel sensor cell has a gate structure that includes a gate dielectric and a gate electrode on the gate dielectric. The gate electrode includes a layer with first and second sections that have a juxtaposed relationship on the gate dielectric. The second section of the gate electrode is comprised of a conductor, such as doped polysilicon or a metal. The first section of the gate electrode is comprised of a metal having a higher work function than the conductor comprising the second section so that the gate structure has an asymmetric threshold voltage.
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申请公布号 |
US2012301990(A1) |
申请公布日期 |
2012.11.29 |
申请号 |
US201213571986 |
申请日期 |
2012.08.10 |
申请人 |
ANDERSON BRENT A.;BRYANT ANDRES;CLARK, JR. WILLIAM F.;ELLIS-MONAGHAN JOHN J.;NOWAK EDWARD J.;INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
ANDERSON BRENT A.;BRYANT ANDRES;CLARK, JR. WILLIAM F.;ELLIS-MONAGHAN JOHN J.;NOWAK EDWARD J. |
分类号 |
H01L31/18 |
主分类号 |
H01L31/18 |
代理机构 |
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代理人 |
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地址 |
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