发明名称 PIXEL SENSOR CELL WITH A DUAL WORK FUNCTION GATE ELECTODE
摘要 Pixel sensor cells, methods of fabricating pixel sensor cells, and design structures for a pixel sensor cell. The pixel sensor cell has a gate structure that includes a gate dielectric and a gate electrode on the gate dielectric. The gate electrode includes a layer with first and second sections that have a juxtaposed relationship on the gate dielectric. The second section of the gate electrode is comprised of a conductor, such as doped polysilicon or a metal. The first section of the gate electrode is comprised of a metal having a higher work function than the conductor comprising the second section so that the gate structure has an asymmetric threshold voltage.
申请公布号 US2012301990(A1) 申请公布日期 2012.11.29
申请号 US201213571986 申请日期 2012.08.10
申请人 ANDERSON BRENT A.;BRYANT ANDRES;CLARK, JR. WILLIAM F.;ELLIS-MONAGHAN JOHN J.;NOWAK EDWARD J.;INTERNATIONAL BUSINESS MACHINES CORPORATION 发明人 ANDERSON BRENT A.;BRYANT ANDRES;CLARK, JR. WILLIAM F.;ELLIS-MONAGHAN JOHN J.;NOWAK EDWARD J.
分类号 H01L31/18 主分类号 H01L31/18
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