REGROWN SHOTTKY STRUCTURES FOR GAN HEMT DEVICES

摘要

Embodiments include but are not limited to apparatuses and systems including a buffer layer, a group III-V layer over the buffer layer, a source contact and a drain contact on the group III-V layer, and a regrown Schottky layer over the group III-V layer, and between the source and drain contacts. The embodiments further include methods for making the apparatuses and systems. Other embodiments may be described and claimed.