发明名称 SEMICONDUCTOR CELL AND SEMICONDUCTOR DEVICE
摘要 A technology is a semiconductor cell and a semiconductor device capable of reducing the coupling capacitance between adjacent bit lines by forming a bit line junction region in a separated island shape when forming a buried bit line, thereby improving characteristics of the semiconductor devices. The semiconductor cell includes a transistor including a gate and a gate junction region, a plurality of buried bit lines disposed to intersect the gate, and a plurality of bit line junction regions, each bit line junction region having an island shape formed between the buried bit lines and connected to the buried bit line.
申请公布号 US2012300557(A1) 申请公布日期 2012.11.29
申请号 US201113327458 申请日期 2011.12.15
申请人 KIM SEUNG HWAN;HYNIX SEMICONDUCTOR INC. 发明人 KIM SEUNG HWAN
分类号 G11C7/10;G11C7/00;G11C7/06;H01L23/48;H01L27/108 主分类号 G11C7/10
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