| 摘要 |
<p>Provided are a semiconductor integrated circuit device capable of improving a distortion property of a high frequency signal, and a high-frequency module provided with the device. For example, reception switch transistors (Q_RX1, Q_RX2) respectively connected to reception terminals (RX1, RX2), and a reception switch common transistor (Q_RXcom) connected to an antenna connection terminal (PNant) by bundling one end of Q_RX1 and one end of Q_RX2, are provided. In this case, the gate width of Q_RXcom is set to a total value of the gate width of Q_RX1 and the gate width of Q_RX2. Thereby, at the time of a transmission operation, a voltage (Vin) of PNant is almost uniformly divided between Q_RXcom, Q_RX1, and Q_RX2.</p> |
