SEMICONDUCTOR DEVICE AND METHOD OF FORMINGVERTICAL INTERCONNECT STRUCTURE USING STUD BUMPS

摘要

Abstract SEMICONDUCTOR DEVICE AND METHOD OF FORMINGVERTICAL INTERCONNECT STRUCTURE USING STUD BUMPSA semiconductor device is made by forming a conductive layer over a temporary carrier. The conductive layer Includes a wettable pad. A stud bump is formed over the wettable pad. The stud bump can be a stud bump or stacked bumps. A semiconductor die is mounted to the carrier. An encapsulant is deposited over the semiconductor die and around the stud bump. A first Interconnect structure is formed over a first surface of the encapsulant. The first Interconnect structure Includes a first IPD and is electrically connected to the stud bump. The carrier is removed. A second Interconnect structure is formed over a second surface of encapsulant opposite the first Interconnect structure. The second Interconnect structure Includes a second IPD. The first or second IPD Includes a capacitor, resistor, or Inductor. The semiconductor devices are stackable and electrically connected through the stud bump.(Fig. 4)