| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor device which can decrease channel resistance and increase an ON-state current, and cause each transistor to operate independently and stably. <P>SOLUTION: A semiconductor device comprises: a fin part 15 formed so as to protrude from a bottom 18c of a gate electrode groove 18; a gate insulation film 21 covering surfaces of the gate electrode groove 18 and the fin part 15; a gate electrode 22 embedded in a lower part of the gate electrode groove 18 and formed so as to stride across the fin part 15 via the gate insulation film 21; a first impurity diffusion region 28 covering an upper part 21A of the gate insulation film 21 arranged on a first lateral face 18a; and a second impurity diffusion region 29 covering a part other than a lower end of the gate insulation film 21 arranged on a second lateral face 18b. A depth of the gate electrode groove 18 from a surface layer 13a of a semiconductor substrate 13 is 150-200 nm and a height from the bottom 18c of the gate electrode groove 18 to an upper part 15a of the fin part 15 is 10-40 nm. <P>COPYRIGHT: (C)2013,JPO&INPIT |
