| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor device manufacturing method arranged so that ions of an element implanted in a predetermined region of a subject to be processed and used to form the N-type region are held inside the subject before and after an annealing step, whereby an N-type region having a desired carrier density can be formed. <P>SOLUTION: The semiconductor device manufacturing method comprises: a preceding step which include loading a subject 101 made of silicon to be processed into a vacuum chamber with its inside kept in a decompression atmosphere, exciting, by plasma, a gas containing an element X for forming N-type region 106N introduced into the vacuum chamber, and implanting the excited ions of the element X in a predetermined region of the subject 101; and a subsequent step which includes annealing the subject 101 subjected to the implantation of the element X. The method further comprises a step which includes exciting, by plasma, the oxygen element-containing gas introduced into the vacuum chamber, and exposing the predetermined region of the subject 101 to oxygen element's radicals resulting from the excitation, provided that the step is carried out between the preceding and subsequent steps. <P>COPYRIGHT: (C)2013,JPO&INPIT |
