| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a highly reliable semiconductor device which can be provided with a semiconductor element below a pad. <P>SOLUTION: A semiconductor device comprises: a semiconductor layer 10 having element formation regions 10A and element isolation regions 20 each provided around the element formation region 10A; elements 30 each formed in the element formation region 10A; an inter-layer insulation layer 60 provided above the semiconductor layer 10; electrode pads 62 provided above the inter-layer insulation layer 60 and each having a planar shape of a rectangle having short sides and long sides and at least a part overlapping the element 30 when viewed from above. The semiconductor layer 10 includes element prohibition regions 12 each located in a predetermined range from vertically below the short side to the outside of the electrode pad 62. <P>COPYRIGHT: (C)2013,JPO&INPIT |
