发明名称 |
Source/Drain Formation and Structure |
摘要 |
A system and method for forming semiconductor structures is disclosed. An embodiment comprises forming a high diffusibility layer adjacent to a gate stack and forming a low diffusibility layer adjacent to the high diffusibility layer. After these two layers are formed, an anneal is performed to diffuse dopants from the high diffusibility layer underneath the gate stack to help form a channel region. |
申请公布号 |
US2012299121(A1) |
申请公布日期 |
2012.11.29 |
申请号 |
US201113114910 |
申请日期 |
2011.05.24 |
申请人 |
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY., LTD. |
发明人 |
WU CHII-MING;SU CHIEN-CHANG;LIN HSIEN-HSIN;PAI YI-FANG |
分类号 |
H01L29/78;H01L21/336 |
主分类号 |
H01L29/78 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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