发明名称 |
METHOD AND APPARATUS FOR PRODUCING SEMICONDUCTOR THIN FILM CRYSTAL |
摘要 |
<p>A method for producing a semiconductor thin film crystal which forms a semiconductor thin film by supplying gas onto a substrate, the method characterized by depositing an SiGe or Ge single crystal or polycrystal on the substrate using as a supply gas monosilane (SiH4), monogermane (GeH4) and fluorine (F2), and an inert gas that dilutes them, wherein the volume flow ratio of the monogermane relative to the monosilane is 0.005-1, the flow ratio of the fluorine is 0.5-4 in a volume flow ratio, the substrate temperature is 350-650°C, and the pressure is 13.3 Pa-1.33 kPa.</p> |
申请公布号 |
WO2012161265(A1) |
申请公布日期 |
2012.11.29 |
申请号 |
WO2012JP63352 |
申请日期 |
2012.05.24 |
申请人 |
NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCEAND TECHNOLOGY;CORNING HOLDING JAPAN G.K.;NAGAI, TAKEHIKO;KONDO, MICHIO;NOGE, HIROSHI |
发明人 |
NAGAI, TAKEHIKO;KONDO, MICHIO;NOGE, HIROSHI |
分类号 |
C30B29/52;C23C16/42;C30B25/02;C30B29/08;H01L21/205;H01L31/04 |
主分类号 |
C30B29/52 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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