SEMICONDUCTOR DEVICE PRODUCTION METHOD AND SEMICONDUCTOR DEVICE

摘要

A semiconductor device production method characterized by including, in this order: a first step in which a semiconductor element having a pn junction protruding section from which a pn junction protrudes is prepared; a second step in which an insulation layer is formed so as to cover the pn junction protruding section; and a third step in which a layer comprising a glass composition that does not substantially contain Pb is formed upon the insulation layer, and then a glass layer is formed upon the insulation layer by sintering the layer comprising the glass composition. This semiconductor device production method enables stable production of a semiconductor device having a low reverse-direction current, having improved insulation and without affecting the glass layer composition or sintering conditions, as a result of interposing the insulation layer between the semiconductor substrate and the glass layer. The effect of increased high-temperature reverse bias tolerance compared to conventional semiconductor devices is also achieved, when the obtained semiconductor device is molded using a resin and made into a resin-sealed semiconductor device.