发明名称 STORAGE ELEMENT AND STORAGE DEVICE
摘要 <P>PROBLEM TO BE SOLVED: To provide a storage element which enables a high holding power and improvement of heat stability without increasing a write current. <P>SOLUTION: A storage element comprises: a storage layer holding information by a magnetization state of a magnetic substance; a magnetization fixed layer having reference magnetization of information stored in the storage layer; an intermediate layer formed by a nonmagnetic substance provided between the storage layer and the magnetization fixed layer; a cap layer provided adjacent to the storage layer and on the opposite side to the intermediate layer; and a metal cap layer provided adjacent to the cap layer and on the opposite side to the storage layer. The storage element stores information by reversing magnetization of the storage layer by utilizing spin torque magnetization reversal generated in association with a current flowing in a lamination direction of a layer structure having the storage layer, the intermediate layer and the magnetization fixed layer. The intermediate layer and the cap layer are oxides and the metal cap layer is formed from Pd or Pt. <P>COPYRIGHT: (C)2013,JPO&INPIT
申请公布号 JP2012235015(A) 申请公布日期 2012.11.29
申请号 JP20110103683 申请日期 2011.05.06
申请人 SONY CORP 发明人 BESSHO KAZUHIRO;HOSOMI MASAKATSU;OMORI HIROYUKI;HIGO YUTAKA;YAMANE KAZUAKI;ASAYAMA TETSUYA;UCHIDA HIROYUKI
分类号 H01L21/8246;H01L27/105;H01L29/82;H01L43/08 主分类号 H01L21/8246
代理机构 代理人
主权项
地址