| 摘要 |
An optically transparent electrically conductive structure having: an optically transparent substrate; an optically transparent buffer and barrier layers; a plurality of optically transparent, two-dimensional electron gas (2-DEG) carrier layers disposed on the substrate. A barrier layer is disposed over a corresponding one of the carrier layers. One of the carrier layers comprises: a GaN channel layer and wherein the barrier layer is Al1-xInxN or Al5yGa1-6yInyN where 0.10<x<0.30 and 0.05<y<0.17.
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