| 发明名称 |
SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF |
| 摘要 |
[Problem]A TFT is manufactured using at least five photomasks in a conventional liquid crystal display device, and therefore the manufacturing cost is high. [Solving Means]By performing the formation of the pixel electrode 127, the source region 123 and the drain region 124 by using three photomasks in three photolithography steps, a liquid crystal display device prepared with a pixel TFT portion, having a reverse stagger type n-channel TFT, and a storage capacitor can be realized, |
| 申请公布号 |
US2012299001(A1) |
申请公布日期 |
2012.11.29 |
| 申请号 |
US201213488926 |
申请日期 |
2012.06.05 |
| 申请人 |
YAMAZAKI SHUNPEI;KUWABARA HIDEAKI;ARAI YASUYUKI;SEMICONDUCTOR ENERGY LABORATORY CO., LTD. |
发明人 |
YAMAZAKI SHUNPEI;KUWABARA HIDEAKI;ARAI YASUYUKI |
| 分类号 |
G02F1/136;H01L29/786;G02F1/1368;G09F9/30;H01L21/00;H01L21/336;H01L21/77;H01L21/84;H01L27/12 |
主分类号 |
G02F1/136 |
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