| 摘要 |
A semiconductor device according to an embodiment includes a plurality of unit cells having a FET structure, this semiconductor device having: a gate electrode wiring connected electrically to gate electrode of the FET structure of each unit cell; a gate electrode pad connected electrically to the gate electrode wiring and connecting each gate electrode to an external element; and a probe electrode pad that is connected electrically to the gate electrode wiring and with which an inspection probe comes into contact. |
