| 摘要 |
<P>PROBLEM TO BE SOLVED: To obtain a desirable pattern with high accuracy without causing deformation at an interface between a low k film and a metal mask. <P>SOLUTION: In a semiconductor device manufacturing method, a semiconductor device including a wiring layer formed by using a multilayer hard mask equipped with a metal mask and an insulation mask is formed. The metal mask is removed for forming a second opening pattern aligned with a first pattern after the multilayer hard mask is used in a first step, and the insulation mask is used for forming a first pattern structure in an insulation layer in a second step. <P>COPYRIGHT: (C)2013,JPO&INPIT |
