| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a micro wave plasma generator operable to generate a micro wave plasma under the condition of a low pressure, and a magnetron sputtering film formation apparatus which allows a thin film formation with small surface asperities. <P>SOLUTION: The micro wave plasma generator 4 comprises: a rectangular wave guide 41 for transmission of a micro wave; a slot antenna 42 having a slot 420 through which the micro wave passes; and a dielectric part 43 which the micro wave after having passed the slot 420 goes into. In the micro wave plasma generator, the incident direction of the micro wave going into the dielectric part 43 from the slot 420 is parallel with a surface 430 of the dielectric part 43 where micro wave plasma P1 is generated. The magnetron sputtering film formation apparatus 1 has the micro wave plasma generator 4, and uses magnetron plasma P2 to form a film while directing micro wave plasma P1 toward between a base 20 and a target 30. <P>COPYRIGHT: (C)2013,JPO&INPIT |
