| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a nonvolatile semiconductor storage device capable of reducing power consumption. <P>SOLUTION: The nonvolatile memory cell that is electrically rewritable includes: power supply circuits 15a, 15b and 15c provided with a pump circuit for driving the nonvolatile memory cell; a ground pad 14d to which a ground voltage is supplied; a first power supply pad 14a to which a first power supply is supplied; a second power supply pad 14e to which a second power supply with a voltage higher than that of the first power supply is supplied; a step-down circuit which is connected to the second power supply pad, step-downs the second power supply, and outputs a voltage lower than that of the second power supply; and a pump circuit which generates a voltage higher than that of the second power supply on the basis of the first power supply. <P>COPYRIGHT: (C)2013,JPO&INPIT |
