| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a pressure-welded semiconductor device in which plastic deformation of an electrode plate due to pressure-welding can be prevented. <P>SOLUTION: The pressure-welded semiconductor device 1 comprises: a semiconductor substrate 11; a plurality of rows of gate wiring 15 formed on the semiconductor substrate 11; a plurality of insulation parts 17 formed to cover the side surface and the upper surface of the gate wiring 15; an emitter electrode 16 formed to fill the space between the gate wirings 15 covered by the insulation part 17 and to cover the upper surface of the insulation part 17 and having a flat surface; and an upper electrode plate 21 pressure-welded to the emitter electrode 16. <P>COPYRIGHT: (C)2013,JPO&INPIT |
