SEMICONDUCTOR THIN FILM STRUCTURE AND METHOD FOR FORMING SAME

摘要

Disclosed are a method for forming a semiconductor thin film and a semiconductor thin film structure formed using the method. In order to prevent the stress caused by a lattice constant and thermal expansion coefficient difference between a substrate and a nitride semiconductor, and the substrate warpage resulting therefrom, the method involves: forming a sacrificial layer on the substrate and patterning the layer through various methods; and forming an inorganic thin film thereon, and selectively removing the sacrificial layer in order to form a cavity on the substrate, said cavity being defined by the substrate and the inorganic thin film.