发明名称 LIGHT-EMITTING DIODE
摘要 <P>PROBLEM TO BE SOLVED: To provide a light-emitting diode which prevents occurrence of lattice defect. <P>SOLUTION: A light-emitting diode 10 comprises: a substrate 100; a first semiconductor layer 120; a second semiconductor layer 140; an activation layer 130; a first electrode 150; and a second electrode 160. The first semiconductor layer, the activation layer, and the second semiconductor layer are sequentially stacked on the substrate along a direction away from the substrate. The first electrode is electrically connected to the first semiconductor layer. The second electrode is electrically connected to the second semiconductor layer. A surface of the first semiconductor layer that is adjacent to the substrate is a carbon nanotube layer 102 which is patterned so as to include a plurality of gaps. Since the patterned surface of the first semiconductor layer is connected to the substrate, a plurality of cavities are formed. <P>COPYRIGHT: (C)2013,JPO&INPIT
申请公布号 JP2012235116(A) 申请公布日期 2012.11.29
申请号 JP20120102565 申请日期 2012.04.27
申请人 QINGHUA UNIV;HON HAI PRECISION INDUSTRY CO LTD 发明人 GI YO;FAN FENG-YAN
分类号 H01L33/22;B82Y20/00;B82Y30/00;H01L21/205;H01L33/32 主分类号 H01L33/22
代理机构 代理人
主权项
地址