发明名称 |
Memory Arrays, Semiconductor Constructions, and Methods of Forming Semiconductor Constructions |
摘要 |
Some embodiments include memory arrays. The memory arrays may have digit lines under vertically-oriented transistors, with the digit lines interconnecting transistors along columns of the array. Each individual transistor may be directly over only a single digit line, with the single digit line being entirely composed of one or more metal-containing materials. The digit lines can be over a deck, and electrically insulative regions can be directly between the digit lines and the deck. Some embodiments include methods of forming memory arrays. A plurality of linear segments of silicon-containing material may be formed to extend upwardly from a base of the silicon-containing material. The base may be etched to form silicon-containing footings under the linear segments, and the footings may be converted into metal silicide. The linear segments may be patterned into a plurality of vertically-oriented transistor pedestals that extend upwardly from the metal silicide footings.
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申请公布号 |
US2012299088(A1) |
申请公布日期 |
2012.11.29 |
申请号 |
US201113117408 |
申请日期 |
2011.05.27 |
申请人 |
MICRON TECHNOLOGY, INC. |
发明人 |
HEINECK LARS P.;SURTHI SHYAM;GUHA JAYDIP |
分类号 |
H01L29/78;H01L21/22;H01L21/336 |
主分类号 |
H01L29/78 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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